Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33861614.
- Also identified by DOI 10.1021/acs.nanolett.0c04816 and PMC identifier 8155316.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities. In this work, we demonstrate the creation of dislocations in the ferroelectric semiconductor Er(Mn,Ti)O<sub>3</sub> with nanoscale spatial precision using electric fields. By combining high-resolution imaging techniques and density functional theory calculations, direct images of the dislocations are collected, and their impact on the local electric transport behavior is studied. Our approach enables local property control via dislocations without the need for external macroscopic strain fields, expanding the application opportunities into the realm of electric-field-driven phenomena.