Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 33881884.
- Also identified by DOI 10.1021/acs.nanolett.0c05051.
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Abstract
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS<sub>2</sub> channel. Our devices show an ON/OFF ratio of ∼10<sup>6</sup>, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 10<sup>4</sup> cycles and state retention up to 10<sup>5</sup> s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.