Realization of Electron Antidoping by Modulating the Breathing Distortion in BaBiO<sub>3</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33886344.
- Also identified by DOI 10.1021/acs.nanolett.1c00750.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The recent proposal of antidoping scheme breaks new ground in conceiving conversely functional materials and devices; yet, the few available examples belong to the correlated electron systems. Here, we demonstrate both theoretically and experimentally that the main group oxide BaBiO<sub>3</sub> is a model system for antidoping using oxygen vacancies. The first-principles calculations show that the band gap systematically increases due to the strongly enhanced Bi-O breathing distortions away from the vacancies and the annihilation of Bi 6<i>s</i>/O 2<i>p</i> hybridized conduction bands near the vacancies. Our further spectroscopic experiments confirm that the band gap increases systematically with electron doping, with a maximal gap enhancement of ∼75% when the film's stoichiometry is reduced to BaBiO<sub>2.75</sub>. These results unambiguously demonstrate the remarkable antidoping effect in a material without strong electron correlations and underscores the importance of bond disproportionation in realizing such an effect.