Low-Temperature and High-Quality Growth of Bi<sub>2</sub>O<sub>2</sub>Se Layered Semiconductors <i>via</i> Cracking Metal-Organic Chemical Vapor Deposition.
basic_science · Level V
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- Record sourced from PubMed, PMID 33973765.
- Also identified by DOI 10.1021/acsnano.1c00811.
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Abstract
Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (<i>i.e.</i>, MoS<sub>2</sub>). Among ternary metal-oxy-chalcogenides, especially Bi<sub>2</sub>O<sub>2</sub>Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi<sub>2</sub>O<sub>2</sub>Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi<sub>2</sub>O<sub>2</sub>Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi<sub>2</sub>O<sub>2</sub>Se. The resulting Bi<sub>2</sub>O<sub>2</sub>Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi<sub>2</sub>O<sub>2</sub>Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm<sup>2</sup>/(V·s) and photoresponsivity of 45134 A/W.