Spatial Control of Charge Doping in n-Type Topological Insulators.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33978424.
- Also identified by DOI 10.1021/acs.nanolett.1c01100.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Spatially controlling the Fermi level of topological insulators and keeping their electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping a hole into n-type topological insulators Bi<sub>2</sub>X<sub>3</sub> (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H<sub>2</sub>O on Bi<sub>2</sub>X<sub>3</sub> decorated with a small amount of carbon, and its trigger is the irradiation of a photon with sufficient energy to excite the core electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale and, thus, paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.