Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33986177.
- Also identified by DOI 10.1126/science.abb3848.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The oxide interface between LaAlO<sub>3</sub> and KTaO<sub>3</sub>(111) can harbor a superconducting state. We report that by applying a gate voltage (<i>V</i> <sub>G</sub>) across KTaO<sub>3</sub>, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped <i>T</i> <sub>c</sub>-<i>V</i> <sub>G</sub> dependence, where <i>T</i> <sub>c</sub> is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance saturates at the lowest temperature on both superconducting and insulating sides, suggesting the emergence of a quantum metallic state associated with a failed superconductor and/or fragile insulator.