A single atom change turns insulating saturated wires into molecular conductors.

Chen, Xiaoping; Kretz, Bernhard; Adoah, Francis; Nickle, Cameron; Chi, Xiao; Yu, Xiaojiang; Del Barco, Enrique; Thompson, Damien et al. · Nat Commun · 2021

basic_science · Level V

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Abstract

We present an efficient strategy to modulate tunnelling in molecular junctions by changing the tunnelling decay coefficient, β, by terminal-atom substitution which avoids altering the molecular backbone. By varying X = H, F, Cl, Br, I in junctions with S(CH<sub>2</sub>)<sub>(10-18)</sub>X, current densities (J) increase >4 orders of magnitude, creating molecular conductors via reduction of β from 0.75 to 0.25 Å<sup>-1</sup>. Impedance measurements show tripled dielectric constants (ε<sub>r</sub>) with X = I, reduced HOMO-LUMO gaps and tunnelling-barrier heights, and 5-times reduced contact resistance. These effects alone cannot explain the large change in β. Density-functional theory shows highly localized, X-dependent potential drops at the S(CH<sub>2</sub>)<sub>n</sub>X//electrode interface that modifies the tunnelling barrier shape. Commonly-used tunnelling models neglect localized potential drops and changes in ε<sub>r</sub>. Here, we demonstrate experimentally that [Formula: see text], suggesting highly-polarizable terminal-atoms act as charge traps and highlighting the need for new charge transport models that account for dielectric effects in molecular tunnelling junctions.