Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe<sub>5</sub>GeTe<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 34152781.
- Also identified by DOI 10.1021/acs.nanolett.1c01108.
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Abstract
Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe<sub>5</sub>GeTe<sub>2</sub> (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10<sup>21</sup> cm<sup>-3</sup> has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.