Manipulating Ferromagnetism in Few-Layered Cr<sub>2</sub> Ge<sub>2</sub> Te<sub>6</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 34173269.
- Also identified by DOI 10.1002/adma.202008586.
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Abstract
The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field-effect transistors with solid ion conductors as the gate dielectric (SIC-FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy-axis switching in few-layered Cr<sub>2</sub> Ge<sub>2</sub> Te<sub>6</sub> . The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out-of-plane direction to an in-plane direction by electric field in the few-layered Cr<sub>2</sub> Ge<sub>2</sub> Te<sub>6</sub> . Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few-layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC-FET device configuration, making further heterostructure-engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device.