Out-of-Plane Dielectric Susceptibility of Graphene in Twistronic and Bernal Bilayers.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 34296602.
- Also identified by DOI 10.1021/acs.nanolett.1c02211 and PMC identifier 8361429.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene-both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability α<sub><i>exp</i></sub> = 10.8 Å<sup>3</sup> and effective out-of-plane dielectric susceptibility ϵ<sub><i>z</i></sub> = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.