Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates.
basic_science · Level V
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- Record sourced from PubMed, PMID 34408136.
- Also identified by DOI 10.1038/s41467-021-24740-2 and PMC identifier 8373986.
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Abstract
Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO<sub>2</sub> buffer layers from TiO<sub>2</sub>/VO<sub>2</sub>/TiO<sub>2</sub> by H<sub>2</sub>O<sub>2</sub>, millimeter-size TiO<sub>2</sub> single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO<sub>2</sub> epitaxial growth on the transferred TiO<sub>2</sub> nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition ([Formula: see text] > 10<sup>3</sup>) even in ultrathin (<10 nm) VO<sub>2</sub> films that are not achievable via direct growth on Si. This discovery offers a synthetic strategy to release the new single-crystalline oxide nanomembranes and an integration scheme to exploit emergent functionality from epitaxial oxide heterostructures in mature silicon devices.