Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe<sub>2</sub> van der Waals Heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 34472869.
- Also identified by DOI 10.1021/acs.nanolett.1c01828.
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Abstract
In this study, an electrostatically induced quantum confinement structure, so-called quantum point contact, has been realized in a p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at a step of <i>e</i><sup>2</sup>/<i>h</i> in addition to quarter plateaus such as 0.25 × 2<i>e</i><sup>2</sup>/<i>h</i> at a finite bias voltage condition indicating the signature of intrinsic spin-polarized quantum point contact.