Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers.
basic_science · Level V
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- Record sourced from PubMed, PMID 34475221.
- Also identified by DOI 10.1073/pnas.2112673118 and PMC identifier 8433558.
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Abstract
While transition-metal dichalcogenide (TMD)-based moiré materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now [T. Li et al., Quantum anomalous Hall effect from intertwined moiré bands. arXiv [Preprint] (2021). https://arxiv.org/abs/2107.01796 (Accessed 5 July 2021)]. In this work, using first-principle calculations and continuum modeling, we reveal the displacement field-induced topological moiré bands in AB-stacked TMD heterobilayer [Formula: see text]/[Formula: see text] Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between [Formula: see text] and [Formula: see text] bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.