Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 34622479.
- Also identified by DOI 10.1002/adma.202105729.
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Abstract
Highly sensitive photodetectors with single-photon level detection are one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias are demonstrated. Top-down etched, heavily doped p-type InP nanowires and n-type aluminium-doped zinc oxide (AZO)/zinc oxide (ZnO) carrier-selective contact are used to form a radial p-n junction with a built-in electric field exceeding 3 × 10<sup>5</sup> V cm<sup>-1</sup> at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway toward low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.