Semiconductor Epitaxy in Superconducting Templates.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 34788993.
- Also identified by DOI 10.1021/acs.nanolett.1c03133 and PMC identifier 8662718.
- Licence recorded as CC BY-NC-ND.
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Abstract
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.