Massive and Topological Surface States in Tensile-Strained HgTe.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 34812638.
- Also identified by DOI 10.1021/acs.nanolett.1c02456.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Magneto-transport measurements on gated high-mobility heterostructures containing a 60 nm layer of tensile-strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital <i>k</i>·<i>p</i> calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages.