Highly Sensitive and Ultra-Broadband VO<sub>2</sub>(B) Photodetector Dominated by Bolometric Effect.
basic_science · Level V
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- Record sourced from PubMed, PMID 34967644.
- Also identified by DOI 10.1021/acs.nanolett.1c04393.
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Abstract
In this study, Wadsley B phase vanadium oxide (VO<sub>2</sub>(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO<sub>2</sub>(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K<sup>-1</sup> at 40 °C, a peak specific detectivity of 6.02 × 10<sup>9</sup> Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO<sub>2</sub>(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.