Solid-Ionic Memory in a van der Waals Heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 35001610.
- Also identified by DOI 10.1021/acsnano.1c05841.
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Abstract
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS<sub>2</sub>/BiFeO<sub>3</sub>/SrTiO<sub>3</sub> van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 10<sup>6</sup> (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 10<sup>4</sup> A/W) and photodetectivity (2.12 × 10<sup>13</sup> Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.