Multilayer WSe<sub>2</sub> /MoS<sub>2</sub> Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering.
basic_science · Level V
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- Record sourced from PubMed, PMID 35019191.
- Also identified by DOI 10.1002/adma.202108412.
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Abstract
While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe<sub>2</sub> /n-MoS<sub>2</sub> phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe<sub>2</sub> /n-MoS<sub>2</sub> heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 10<sup>4</sup> A W<sup>-1</sup> and 1.7 × 10<sup>13</sup> Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 10<sup>2</sup> A W<sup>-1</sup> and 3.6 × 10<sup>11</sup> Jones, respectively. Such enhanced optical properties of WSe<sub>2</sub> /MoS<sub>2</sub> heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications.