Nanospike electrodes and charge nanoribbons: A new design for nanoscale thin-film transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35089782.
- Also identified by DOI 10.1126/sciadv.abm1154 and PMC identifier 8797182.
- Licence recorded as CC BY-NC.
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Abstract
To scale down thin-film transistor (TFT) channel lengths for accessing higher levels of speed and performance, a redesign of the basic device structure is necessary. With nanospike-shaped electrodes, field-emission effects can be used to assist charge injection from the electrodes in sub-200-nm channel length amorphous oxide and organic TFTs. These designs result in the formation of charge nanoribbons at low gate biases that greatly improve subthreshold and turn-off characteristics. A design paradigm in which the gate electric field can be less than the source-drain field is proposed and demonstrated. By combining small channel lengths and thick gate dielectrics, this approach is also shown to be a promising solution for boosting TFT performance through charge focusing and charge nanoribbon formation in flexible/printed electronics applications.