Heterojunction Annealing Enabling Record Open-Circuit Voltage in Antimony Triselenide Solar Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 35104384.
- Also identified by DOI 10.1002/adma.202109078.
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Abstract
Despite the fact that antimony triselenide (Sb<sub>2</sub> Se<sub>3</sub> ) thin-film solar cells have undergone rapid development in recent years, the large open-circuit voltage (V<sub>OC</sub> ) deficit still remains as the biggest bottleneck, as even the world-record device suffers from a large V<sub>OC</sub> deficit of 0.59 V. Here, an effective interface engineering approach is reported where the Sb<sub>2</sub> Se<sub>3</sub> /CdS heterojunction (HTJ) is subjected to a post-annealing treatment using a rapid thermal process. It is found that nonradiative recombination near the Sb<sub>2</sub> Se<sub>3</sub> /CdS HTJ, including interface recombination and space charge region recombination, is greatly suppressed after the HTJ annealing treatment. Ultimately, a substrate Sb<sub>2</sub> Se<sub>3</sub> /CdS thin-film solar cell with a competitive power conversion efficiency of 8.64% and a record V<sub>OC</sub> of 0.52 V is successfully fabricated. The device exhibits a much mitigated V<sub>OC</sub> deficit of 0.49 V, which is lower than that of any other reported efficient antimony chalcogenide solar cell.