Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35108054.
- Also identified by DOI 10.1126/sciadv.abg5860 and PMC identifier 8809685.
- Licence recorded as CC BY-NC.
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Abstract
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO<sub>3</sub>. By confining thin layers of BiFeO<sub>3</sub> in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.