Waveguide coupled III-V photodiodes monolithically integrated on Si.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35177604.
- Also identified by DOI 10.1038/s41467-022-28502-6 and PMC identifier 8854727.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In<sub>0.5</sub>Ga<sub>0.5</sub>As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm<sup>2</sup> at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f<sub>3dB</sub> exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.