Reducing Contact Resistance and Boosting Device Performance of Monolayer MoS₂ by In Situ Fe Doping.

Abstract

2D semiconductors are emerging as plausible candidates for next-generation "More-than-Moore" nanoelectronics to tackle the scaling challenge of transistors. Wafer-scale 2D semiconductors, such as MoS₂ and WS₂ , have been successfully synthesized recently; nevertheless, the absence of effective doping technology fundamentally results in energy barriers and high contact resistances at the metal-semiconductor interfaces, and thus restrict their practical applications. Herein, a controllable doping strategy in centimeter-sized monolayer MoS₂ films is developed to address this critical issue and boost the device performance. The ultralow contact resistance and perfect Ohmic contact with metal electrodes are uncovered in monolayer Fe-doped MoS₂ , which deliver excellent device performance featured with ultrahigh electron mobility and outstanding on/off current ratio. Impurity scattering is suppressed significantly thanks to the ultralow electron effective mass and appropriate doping site. Particularly, unidirectionally aligned monolayer Fe-doped MoS₂ domains are prepared on 2 in. commercial c-plane sapphire, suggesting the feasibility of synthesizing wafer-scale 2D single-crystal semiconductors with outstanding device performance. This work presents the potential of high-performance monolayer transistors and enables further device downscaling and extension of Moore's law.