Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35312282.
- Also identified by DOI 10.1021/acsnano.2c00609.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO<sub>3</sub>/SrTiO<sub>3</sub> (LAO/STO) heterointerfaces where a single-unit-cell LaMnO<sub>3</sub> (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron-phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron-phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.