Revealing the Interaction of Charge Carrier-Phonon Coupling by Quantification of Electronic Properties at the SrTiO<sub>3</sub>/TiO<sub>2</sub> Heterointerface.
basic_science · Level V
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- Record sourced from PubMed, PMID 35315673.
- Also identified by DOI 10.1021/acs.nanolett.1c04698.
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Abstract
Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO<sub>3</sub>/TiO<sub>2</sub> interface. We found an increased high-frequency dielectric constant (ε<sub>∞</sub> = 7.1-9.0) and charge carrier density (<i>n</i> = 6.5 × 10<sup>19</sup> to 1.5 × 10<sup>20</sup> cm<sup>-3</sup>) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.