Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 35570382.
- Also identified by DOI 10.1002/adma.202201238.
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Abstract
Nanoscale resistive memory devices are being explored for neuromorphic and in-memory computing. However, non-ideal device characteristics of read noise and resistance drift pose significant challenges to the achievable computational precision. Here, it is shown that there is an additional non-ideality that can impact computational precision, namely the bias-polarity-dependent current flow. Using phase-change memory (PCM) as a model system, it is shown that this "current-voltage" non-ideality arises both from the material and geometrical properties of the devices. Further, we discuss the detrimental effects of such bipolar asymmetry on in-memory matrix-vector multiply (MVM) operations and provide a scheme to compensate for it.