ZrTe<sub>2</sub>/CrTe<sub>2</sub>: an epitaxial van der Waals platform for spintronics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35624122.
- Also identified by DOI 10.1038/s41467-022-30738-1 and PMC identifier 9142486.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe<sub>2</sub>) and a topological semimetal (ZrTe<sub>2</sub>). We find that one unit-cell (u.c.) thick 1T-CrTe<sub>2</sub> grown epitaxially on ZrTe<sub>2</sub> is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe<sub>2</sub>), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe<sub>2</sub> (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.