Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35650181.
- Also identified by DOI 10.1038/s41467-022-30519-w and PMC identifier 9160094.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS<sub>2</sub> memristor arrays are reported. The MoS<sub>2</sub> memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS<sub>2</sub> memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS<sub>2</sub> layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.