Sb<sub>2</sub> Se<sub>3</sub> Thin-Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology.
basic_science · Level V
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- Record sourced from PubMed, PMID 35668680.
- Also identified by DOI 10.1002/adma.202202969.
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Abstract
Binary Sb<sub>2</sub> Se<sub>3</sub> semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, Sb<sub>2</sub> Se<sub>3</sub> solar cells suffer from complex and unconventional intrinsic defects due to the low symmetry of the quasi-1D crystal structure resulting in a considerable voltage deficit, which limits the ultimate power conversion efficiency (PCE). In this work, the creation of compact Sb<sub>2</sub> Se<sub>3</sub> films with strong [00l] orientation, high crystallinity, minimal deep level defect density, fewer trap states, and low non-radiative recombination loss by injection vapor deposition is reported. This deposition technique enables superior films compared with close-spaced sublimation and coevaporation technologies. The resulting Sb<sub>2</sub> Se<sub>3</sub> thin-film solar cells yield a PCE of 10.12%, owing to the suppressed carrier recombination and excellent carrier transport and extraction. This method thus opens a new and effective avenue for the fabrication of high-quality Sb<sub>2</sub> Se<sub>3</sub> and other high-quality chalcogenide semiconductors.