Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors.
basic_science · Level V
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- Record sourced from PubMed, PMID 35728050.
- Also identified by DOI 10.1002/adma.202202472.
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Abstract
2D semiconductors, such as molybdenum disulfide (MoS<sub>2</sub> ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS<sub>2</sub> film is successfully synthesized, which is then used to fabricate top-gated (TG) MoS<sub>2</sub> field-effect transistors with wafer-scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass-transistor logic configuration based on pseudo-NMOS is then employed to design more complex MoS<sub>2</sub> logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs.