Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35763431.
- Also identified by DOI 10.1021/acsnano.2c03523 and PMC identifier 9331138.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10<sup>6</sup>) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-<i>b</i>:2',3'-<i>f</i>]thieno[3,2-<i>b</i>]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.