Mid-Infrared Intraband Photodetector <i>via</i> High Carrier Mobility HgSe Colloidal Quantum Dots.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 35792103.
- Also identified by DOI 10.1021/acsnano.2c03631.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm<sup>2</sup>/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1S<sub>e</sub> to 1P<sub>e</sub> state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1S<sub>e</sub> to 1P<sub>e</sub> transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 10<sup>9</sup> Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO<sub>2</sub> gas sensor with a range from 0.25 to 2000 ppm.