A Room-Temperature Ferroelectric Resonant Tunneling Diode.
basic_science · Level V
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- Record sourced from PubMed, PMID 35801685.
- Also identified by DOI 10.1002/adma.202205359.
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Abstract
Resonant tunneling is a quantum-mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum-well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room-temperature ferroelectric-modulated resonant tunneling and negative differential resistance (NDR) behaviors in all-perovskite-oxide BaTiO<sub>3</sub> /SrRuO<sub>3</sub> /BaTiO<sub>3</sub> QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO<sub>3</sub> ferroelectric with the NDR ratio modulated by ≈3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 × 10<sup>4</sup> . The observed NDR effect is explained an energy bandgap between Ru-t<sub>2g</sub> and Ru-e<sub>g</sub> orbitals driven by electron-electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.