Polishing the Lead-Poor Surface for Efficient Inverted CsPbI<sub>3</sub> Perovskite Solar Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 35916039.
- Also identified by DOI 10.1002/adma.202205066.
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Abstract
Triiodide cesium lead perovskite (CsPbI<sub>3</sub> ) has promising prospects in the development of efficient and stable photovoltaics in both single-junction and tandem structures. However, achieving inverted devices that provide good stability and are compatible to tandem devices remains a challenge, and the deep insights are still not understood. This study finds that the surface components of CsPbI<sub>3</sub> are intrinsically lead-poor and the relevant traps are of p-type with localized states. These deep-energy-level p traps induce inferior transfer or electrons and serious nonradiative recombination at the CsPbI<sub>3</sub> /PCBM interface, leading to the considerable open-circuit voltage (V<sub>oc</sub> ) loss and reduction of fill factor (FF). Compared to molecular passivation, polishing treatment with 1,4-butanediamine can eliminate the nonstoichiometric components and root these intrinsically lead-poor traps for superior electron transfer. The polishing treatment significantly improves the FF and V<sub>oc</sub> of the inverted CsPbI<sub>3</sub> photovoltaics, creating an efficiency promotion from 12.64% to 19.84%. Moreover, 95% of the initial efficiency of the optimized devices is maintained after the output operation for 1000 h.