Confined Monolayer Ag As a Large Gap 2D Semiconductor and Its Momentum Resolved Excited States.
basic_science · Level V
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- Record sourced from PubMed, PMID 36126277.
- Also identified by DOI 10.1021/acs.nanolett.2c02501.
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Abstract
2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (>1 eV) 2D semiconductor, consistent with ab initio GW calculations. The measured valence band dispersion matches the GW quasiparticle band structure. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m<sub>0</sub>. Possible mechanisms for this large enhancement in the "apparent mass" are discussed.