Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36149950.
- Also identified by DOI 10.1126/sciadv.abq0187 and PMC identifier 9506725.
- Licence recorded as CC BY-NC.
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Abstract
The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. By eliminating deep-trap defects through processing optimization, we achieved devices with a maximum responsivity close to 6 × 10<sup>4</sup> A/W, a specific detectivity (<i>D</i>*) of 1.06 × 10<sup>13</sup> Jones, and an <i>f</i><sub>3dB</sub> of 1.2 MHz at a low driving voltage of 3 V. As a result, a record gain-bandwidth product is achieved. The device further exhibits the advantage in photoplethysmography detection with weak illuminations, where our device accurately detects the detailed features that are out of the capability of conventional photodetectors.