Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36182934.
- Also identified by DOI 10.1038/s41467-022-33528-x and PMC identifier 9526722.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Compact lasers capable of producing kilowatt class peak power are highly desirable for applications in various fields, including laser remote sensing, laser micromachining, and biomedical photonics. In this paper, we propose a high-peak-power chip-scale semiconductor/solid-state vertically integrated laser in which two cavities are optically coupled at the solid-state laser gain medium. The first cavity is for the intra-pumping of ytterbium-doped yttrium aluminum garnet (Yb:YAG) with an electrically driven indium gallium arsenide (InGaAs) quantum well, and the second cavity consists of Yb:YAG and chromium-doped yttrium aluminum garnet (Cr:YAG) for passive Q-switching. The proposed laser produces pulses as short as 450 ps, and an estimated peak power of 57.0 kW with a laser chip dimension of 1 mm<sup>3</sup>. To the best of our knowledge, this is the first monolithic integration of semiconductor and solid-state laser gain mediums to realize a compact high-peak-power laser.