Top-Down Approaches for 10 nm-Scale Nanochannel: Toward Exceptional H<sub>2</sub>S Detection.
basic_science · Level V
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- Record sourced from PubMed, PMID 36223595.
- Also identified by DOI 10.1021/acsnano.2c07785.
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Abstract
Metal oxide semiconductors (MOS) have proven to be most powerful sensing materials to detect hydrogen sulfide (H<sub>2</sub>S), achieving part per billion (ppb) level sensitivity and selectivity. However, there has not been a way of extending this approach to the top-down H<sub>2</sub>S sensor fabrication process, completely limiting their commercial-level productions. In this study, we developed a top-down lithographic process of a 10 nm-scale SnO<sub>2</sub> nanochannel for H<sub>2</sub>S sensor production. Due to high-resolution (15 nm thickness) and high aspect ratio (>20) structures, the nanochannel exhibited highly sensitive H<sub>2</sub>S detection performances (<i>R</i><sub>a</sub>/<i>R</i><sub>g</sub> = 116.62, τ<sub>res</sub> = 31 s at 0.5 ppm) with selectivity (<i>R</i><sub>H<sub>2</sub>S</sub>/<i>R</i><sub>acetone</sub> = 23 against 5 ppm acetone). In addition, we demonstrated that the nanochannel could be efficiently sensitized with the p-n heterojunction without any postmodification or an additional process during one-step lithography. As an example, we demonstrated that the H<sub>2</sub>S sensor performance can be drastically enhanced with the NiO nanoheterojunction (<i>R</i><sub>a</sub>/<i>R</i><sub>g</sub> = 166.2, τ<sub>res</sub> = 21 s at 0.5 ppm), showing the highest range of sensitivity demonstrated to date for state-of-the-art H<sub>2</sub>S sensors. These results in total constitute a high-throughput fabrication platform to commercialize the H<sub>2</sub>S sensor that can accelerate the development time and interface in real-life situations.