Phase and polarization modulation in two-dimensional In<sub>2</sub>Se<sub>3</sub> via in situ transmission electron microscopy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36269828.
- Also identified by DOI 10.1126/sciadv.abo0773 and PMC identifier 9586485.
- Licence recorded as CC BY-NC.
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Abstract
Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In<sub>2</sub>Se<sub>3</sub> with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β' phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In<sub>2</sub>Se<sub>3</sub> remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In<sub>2</sub>Se<sub>3</sub>. We achieve reversible AFE and out-of-plane FE phase transition in 2D In<sub>2</sub>Se<sub>3</sub> by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In<sub>2</sub>Se<sub>3</sub> can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.