Formation of In-Plane Semiconductor-Metal Contacts in 2D Platinum Telluride by Converting PtTe₂ to Pt₂Te₂.

Abstract

Monolayer PtTe₂ is a narrow gap semiconductor while Pt₂Te₂ is a metal. Here we show that the former can be transformed into the latter by reaction with vapor-deposited Pt atoms. The transformation occurs by nucleating the Pt₂Te₂ phase within PtTe₂ islands, so that a metal-semiconductor junction is formed. A flat band structure is found with the Fermi level of the metal aligning with that of the intrinsically p-doped PtTe₂. This is achieved by an interface dipole that accommodates the ∼0.2 eV shift in the work functions of the two materials. First-principles calculations indicate that the origin of the interface dipole is the atomic scale charge redistributions at the heterojunction. The demonstrated compositional phase transformation of a 2D semiconductor into a 2D metal is a promising approach for making in-plane metal contacts that are required for efficient charge injection and is of particular interest for semiconductors with large spin-orbit coupling, like PtTe₂.