Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36460647.
- Also identified by DOI 10.1038/s41467-022-35218-0 and PMC identifier 9718757.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Formamidinium lead iodide (FAPbI<sub>3</sub>) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI<sub>3</sub> perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI<sub>3</sub>, two-dimensional FA<sub>2</sub>FA<sub>n-1</sub>Pb<sub>n</sub>I<sub>3n+1</sub>, and three-dimensional α-FAPbI<sub>3</sub>, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI<sub>3</sub>-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.