Interlayer Transition Induced Infrared Response in ReS<sub>2</sub>/2D Perovskite van der Waals Heterostructure Photodetector.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36475758.
- Also identified by DOI 10.1021/acs.nanolett.2c04328.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The emerging Ruddlesden-Popper two-dimensional perovskite (2D PVK) has recently joined the family of 2D semiconductors as a potential competitor for building van der Waals (vdW) heterostructures in future optoelectronics. However, to date, most of the reported heterostructures based on 2D PVKs suffer from poor spectral response that is caused by intrinsic wide bandgap of constituting materials. Herein, a direct heterointerface bandgap (∼0.4 eV) between 2D PVK and ReS<sub>2</sub> is demonstrated. The strong interlayer coupling reduces the energy interval at the heterojunction region so that the heterostructure shows high sensitivity with the spectral response expanding to 2000 nm. The large type-II band offsets exceeding 1.1 eV ensure fast photogenerated carriers separation at the heterointerface. When this heterostructure is used as a self-driven photodetector, it exhibits a record high detectivity up to 1.8 × 10<sup>14</sup> Jones, surpassing any reported 2D self-driven devices, and an impressive external quantum efficiency of 68%.