Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36494441.
- Also identified by DOI 10.1038/s41467-022-35428-6 and PMC identifier 9734176.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH<sub>3</sub>)<sub>5</sub>Ti(OMe)<sub>3</sub> is used as a molecular surface inhibitor to prevent the growth of TiO<sub>2</sub> film in the next atomic layer deposition process. Cp(CH<sub>3</sub>)<sub>5</sub>Ti(OMe)<sub>3</sub> adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO<sub>2</sub> growth. This resulted in the formation of perfectly seamless TiO<sub>2</sub> films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO<sub>2</sub> film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.