Van der Waals Engineering of Ultrafast Carrier Dynamics in Magnetic Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 36607246.
- Also identified by DOI 10.1021/acs.nanolett.2c03075.
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Abstract
Heterostructures composed of the intrinsic magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub> and its nonmagnetic counterpart Bi<sub>2</sub>Te<sub>3</sub> host distinct surface electronic band structures depending on the stacking order and exposed termination. Here, we probe the ultrafast dynamical response of MnBi<sub>2</sub>Te<sub>4</sub> and MnBi<sub>4</sub>Te<sub>7</sub> following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy and disentangle surface from bulk dynamics based on density functional theory slab calculations of the surface-projected electronic structure. We gain access to the out-of-equilibrium charge carrier populations of both MnBi<sub>2</sub>Te<sub>4</sub> and Bi<sub>2</sub>Te<sub>3</sub> surface terminations of MnBi<sub>4</sub>Te<sub>7</sub>, revealing an instantaneous occupation of states associated with the Bi<sub>2</sub>Te<sub>3</sub> surface layer followed by carrier extraction into the adjacent MnBi<sub>2</sub>Te<sub>4</sub> layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by phonon scattering with significantly slower relaxation times in the magnetic MnBi<sub>2</sub>Te<sub>4</sub> septuple layers. The observed competition between interlayer charge transfer and intralayer phonon scattering demonstrates a method to control ultrafast charge transfer processes in MnBi<sub>2</sub>Te<sub>4</sub>-based van der Waals compounds.