Van der Waals Engineering of Ultrafast Carrier Dynamics in Magnetic Heterostructures.

Majchrzak, Paulina Ewa; Liu, Yuntian; Volckaert, Klara; Biswas, Deepnarayan; Sahoo, Chakradhar; Puntel, Denny; Bronsch, Wibke; Tuniz, Manuel et al. · Nano Lett · 2023

basic_science · Level V

Where this comes from

Abstract

Heterostructures composed of the intrinsic magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub> and its nonmagnetic counterpart Bi<sub>2</sub>Te<sub>3</sub> host distinct surface electronic band structures depending on the stacking order and exposed termination. Here, we probe the ultrafast dynamical response of MnBi<sub>2</sub>Te<sub>4</sub> and MnBi<sub>4</sub>Te<sub>7</sub> following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy and disentangle surface from bulk dynamics based on density functional theory slab calculations of the surface-projected electronic structure. We gain access to the out-of-equilibrium charge carrier populations of both MnBi<sub>2</sub>Te<sub>4</sub> and Bi<sub>2</sub>Te<sub>3</sub> surface terminations of MnBi<sub>4</sub>Te<sub>7</sub>, revealing an instantaneous occupation of states associated with the Bi<sub>2</sub>Te<sub>3</sub> surface layer followed by carrier extraction into the adjacent MnBi<sub>2</sub>Te<sub>4</sub> layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by phonon scattering with significantly slower relaxation times in the magnetic MnBi<sub>2</sub>Te<sub>4</sub> septuple layers. The observed competition between interlayer charge transfer and intralayer phonon scattering demonstrates a method to control ultrafast charge transfer processes in MnBi<sub>2</sub>Te<sub>4</sub>-based van der Waals compounds.