Direct Band Gap AlGaAs Wurtzite Nanowires.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36649590.
- Also identified by DOI 10.1021/acs.nanolett.2c04184.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band <math xmlns="http://www.w3.org/1998/Math/MathML"><mover><mi>k</mi><mo>→</mo></mover><mo>·</mo><mover><mi>p</mi><mo>→</mo></mover></math> method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.