Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 36716244.
- Also identified by DOI 10.1021/acsnano.2c10631.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq<sup>-1</sup> without gating) of monolayer MoS<sub>2</sub> and a high mobility and carrier concentration (4.1 × 10<sup>13</sup> cm<sup>-2</sup>). We employed our robust method for the successful contact doping of a monolayer MoS<sub>2</sub> Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.