Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.
review · Level V
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- Record sourced from PubMed, PMID 36751064.
- Also identified by DOI 10.1002/adma.200900375.
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Abstract
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..