Sub-Nanosecond Switching of Si:HfO<sub>2</sub> Ferroelectric Field-Effect Transistor.
basic_science · Level V
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- Record sourced from PubMed, PMID 36763845.
- Also identified by DOI 10.1021/acs.nanolett.2c04706.
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Abstract
The discovery of ferroelectric doped HfO<sub>2</sub> enabled the emergence of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to meet the growing need for fast, low-power, low-cost, and high-density nonvolatile memory, and neuromorphic devices. Although HfO<sub>2</sub> FeFETs have been widely studied in the past few years, their fundamental switching speed is yet to be explored. Importantly, the shortest polarization time demonstrated to date in HfO<sub>2</sub>-based FeFET was ∼10 ns. Here, we report that a single subnanosecond pulse can fully switch HfO<sub>2</sub>-based FeFET. We also study the polarization switching kinetics across 11 orders of magnitude in time (300 ps to 8 s) and find a remarkably steep time-voltage relation, which is captured by the classical nucleation theory across this wide range of pulse widths. These results demonstrate the high-speed capabilities of FeFETs and help better understand their fundamental polarization switching speed limits and switching kinetics.