Controllable Oxidation of ZrS<sub>2</sub> to Prepare High-κ, Single-Crystal m-ZrO<sub>2</sub> for 2D Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 36815429.
- Also identified by DOI 10.1002/adma.202212079.
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Abstract
High-κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, monoclinic ZrO<sub>2</sub> (m-ZrO<sub>2</sub> ) shows good potential because of its inertness and high-κ with respect to SiO<sub>2</sub> , but a method to produce ultrathin single crystal is lacking. Here, the controllable preparation of ultrathin m-ZrO<sub>2</sub> single crystals via the in situ thermal oxidation of ZrS<sub>2</sub> is achieved. As-grown m-ZrO<sub>2</sub> presents an equivalent oxide thickness of ≈0.29 nm, a high dielectric constant of ≈19, and a breakdown voltage (E<sub>BD</sub> ) of ≈7.22 MV cm<sup>-1</sup> . MoS<sub>2</sub> field effect transistor (FET) by using m-ZrO<sub>2</sub> as a dielectric layer shows comparable mobility to that using SiO<sub>2</sub> dielectric. The ultraclean interface of m-ZrO<sub>2</sub> /MoS<sub>2</sub> and high crystalline quality of m-ZrO<sub>2</sub> lead to negligible hysteresis in transfer curves. Single crystal m-ZrO<sub>2</sub> dielectric shows potential application in digital complementary metal oxidesemiconductor (CMOS) logic FET.